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| MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HVDi (High Voltage Diode) Module HIGH POWER SWITCHING USE INSULATED TYPE RM400DY-66S q IDC ................................................................ 400A q VRRM ...................................................... 3300V q Insulated type q 2-elements in a pack APPLICATION 3-level inverters, 3-level converters, DC choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57 0.25 57 0.25 4-M8 NUTS (E) A1 K1 (C) 20 (E) A2 K2 (C) K1 124 0.25 140 C K2 C A1 E A2 E C E G 6-7 MOUNTING HOLES 40 CIRCUIT DIAGRAM 61.5 18 15 38 5 LABEL 30 Mar. 2003 MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HVDi (High Voltage Diode) Module HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj = 25C) Symbol VRRM VRSM VR(DC) Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 66 3300 3300 2200 Unit V V V Symbol IDC IFSM I2t Tj Tstg Viso -- -- Item Output DC current Surge forward current I2t for fusing Junction temperature Storage temperature Isolation Voltage Mounting torque Mass Conditions TC =25C 1 cycle of half wave 60Hz, peak value, non-repetitive, Tj = 25C start, VRM = 0V Value of one cycle surge current, tW = 8.3ms, Tj = 25C start -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Typical value Ratings 400 3200 4.27 104 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 1.5 Unit A A A 2s C C V N*m N*m kg ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol IRRM VFM trr Qrr Rth(j-c) Rth(c-f) Item Repetitive reverse current Forward voltage Reverse recovery time Reverse recovery charge Termal resistance Contact thermal resistance Conditions VRRM applied, VRM = VRRM IFM = 400A IFM = 400A, dif/dt = -800A/s, VR = 1650V Junction to case (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Min -- -- -- -- -- -- Limits Typ -- 3.50 -- 100 -- 0.036 Max 3 4.55 1.20 -- 0.072 -- Unit mA V s C K/W K/W Mar. 2003 MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HVDi (High Voltage Diode) Module HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 3 2 Tj = 25C FORWARD CURRENT (A) Zth(j - c) (C/ W) 103 7 5 3 2 102 7 5 3 0 1 2 3 4 5 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.072K/W 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) FORWARD VOLTAGE (V) REVERSE RECOVERY CHARACTERISTICS VS. FORWARD CURRENT (TYPICAL) 300 VCC = 1650V, diF/dt = -800A/s Tj = 25C Inductive load Integrated over range of 10% 200 Qrr (C) Qrr (C) REVERSE RECOVERY CHARACTERISTICS VS. -di/dt (TYPICAL) 500 VCC = 1650V IF = 400A 400 300 200 100 100 0 0 200 400 600 800 1000 0 0 500 1000 1500 2000 2500 FORWARD CURRENT (A) -di/dt (A/s) Mar. 2003 |
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